BAT85 vishay semiconductors formerly general semiconductor document number 88146 www.vishay.com 13-may-02 1 schottky diode maximum ratings & thermal characteristics ratings at 25? ambient temperature unless otherwise specified. parameter symbol value unit continuous reverse voltage v r 30 v forward continuous current at t amb = 25 ci f 200 (1) ma peak forward current at t amb = 25 ci fm 300 (1) ma surge forward current at t p < 1s, t amb = 25 ci fsm 600 (1) ma power dissipation at t amb = 65 cp tot 200 (1) mw thermal resistance juntion to ambient air r ja 430 (1) c/w maximum junction temperature t j 125 c ambient operating temperature range t a 65 to +125 c storage temperature range t s 65 to +150 c features for general purpose applications. this diode features low turn-on voltage. this device is protected by a pn junction guard ring against excessive voltage, such as electrostatic discharges this diode is also available in the minimelf case with type designation bas85. mechanical data case: do-35 glass case weight: approx. 0.13g packaging codes/options: d7/10k per 13 reel (52mm tape), 20k/box d8/10k per ammo tape (52mm tape), 20k/box electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit reverse breakdown voltage v (br)r i r = 10 a (pulsed) 30 v leakage current i r v r = 25v 2 a i f = 0.1ma 0.24 forward voltage i f = 1ma 0.32 pulse test t p < 300 s, < 2% v f i f = 10ma 0.4 v i f = 30ma 0.5 i f = 100ma 0.8 capacitance c tot v r = 1v, f = 1mhz 10 pf reverse recovery time t rr i f = 10ma to i r = 10ma 5ns to i r = 1ma note: (1) valid provided that leads at a distance of 4mm from case are kept at ambient temperature do-204ah (do-35 glass) dimensions in inches and (millimeters)
BAT85 vishay semiconductors formerly general semiconductor www.vishay.com document number 88146 2 13-may-02 ratings and characteristic curves (t a = 25 c unless otherwise noted) BAT85 admissible power dissipation vs. ambient temperature 0 100 0 100 200 200 BAT85 typical instantaneous forward characteristics 0.01 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1 10 100 1000 t j = 125 c t j = 25 c t j = -40 c i f - forward current (ma) v f - forward voltage (v) BAT85 typical reverse characteristics 0.01 0.1 1 5 10 15 20 25 30 1 10 100 1000 v r - reverse voltage (v) i r - reverse leakage current ( a) t j = 125 c 100 c 75 c 50 c 25 c BAT85 typical junction capacitance 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 v r - reverse voltage (v) c j - junction capacitance (pf)
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